(1) B. Agrawal, V. K. De, J. M. Pimbley and J. D. Meindl, "Comparative Scaling Opportunities of MOSFET Structures for GSI'', submitted to the Symposium on VLSI Technology, Japan, 1993.
(2) G. C. Serafica, J. M. Pimbley and G. Belfort, "Protein Fractionation Using Fast Flow Immobilized Metal Chelate Affinity Membranes'', Biotechnology and Bioengineering 43, 21-36, 1994.
(3) E. K. Banghart, J. P. Lavine and J. M. Pimbley, "Analytical Approaches to Charge Transfer Problems in Charge-Coupled Devices with Barriers and Wells'', Sixteenth Annual Electron Devices Activities in Western New York Conference, Rochester, NY, November 1992.
(4) T. P. Chow, D. N. Pattanayak, E. J. Wildi, J. M. Pimbley, B. J. Baliga and M. S. Adler, "Design of Current Sensors in IGBTs'', Fiftieth Annual Device Research Conference, Cambridge, MA, June 22-24, 1992.
(7) J. P. Lavine, E. K. Banghart, J. M. Pimbley, E. T. Nelson and B. C. Burkey, "Charge Transfer in the Presence of Potential Wells'', abstract submitted to the NUPAD conference, 1992.
(8) D. M. Brown, E. T. Downey, M. Ghezzo, J. Kretchmer, R. J. Saia, Y.-S. Liu, J. Edmond, G. Gati, J. M. Pimbley and W. E. Schneider, "Silicon Carbide UV Photodiodes'', IEEE Transactions on Electron Devices ED-40 (2), 325-33, February 1993.
(9) J. M. Pimbley, D. T. McGrath and J. J. Tiemann, "Noisy Signals for Time-Domain Circuit Simulation'', to be submitted to IEEE Trans. Circ. & Systems, 1992.
(10) B. Agrawal, J. M. Pimbley and J. D. Meindl, "Toward a One-Sixteenth *m MOSFET'', to be submitted to IEEE Trans. Electron Devices, 1992.
(12) G. Belfort, P. Mikulasek, J. M. Pimbley and K. Y. Chung, "Diagnosis of Membrane Fouling Using a Rotating Annular Filter: 2.~~Dilute Particle Suspensions of Known Particle Size'', J. Membrane Science 77, 23-39, 1993.
(15) J. M. Morgan, A. Hasekioglu and J. M. Pimbley, "Recombination Lifetime in the Pulsed MOS Capacitor'', Solid-State Electronics, 1991.
(16) J. M. Pimbley, "The Maximum Entropy Spline'', submitted to SIAM J. Num. Anal., 1992.
(17) G. Belfort and J. M. Pimbley, "Fouling and Fluid Mechanics in a Rotating Annular Filter'', presented at the 1991 North American Membrane Society Annual Meeting, San Diego, 1991.
(18) P. Mikulasek, J. M. Pimbley and G. Belfort, "Membrane Fouling with Well-Defined Suspensions in a Rotating Filter'', presented at Engineering of Membrane Processes, Bavaria, Germany, May 1991.
(19) C. C. Lim, J. M. Pimbley, C. Schmeiser and D. W. Schwendeman, "Rotating Waves for Semiconductor Inverter Rings'', SIAM J. Appl. Math. 52(3), 676-90, June 1992.
(20) B. Agrawal, J. M. Pimbley and J. D. Meindl, "Scaling Limits of SOI MOSFETs Compared to Bulk MOSFETs'', submitted to IEEE Trans. Electron Devices, 1990.
(21) E. K. Banghart, J. P. Lavine, J. M. Pimbley and B. C. Burkey, "Charge Transfer in the Presence of Potential Barriers'', presented at NASECODE VII, Copper Mountain, CO, April 1991; also International Journal for Computation and Mathematics in Electrical and Electronic Engineering 10(4), 205-13, December 1991.
(22) D. M. Brown, E. T. Downey, M. Ghezzo, J. Kretchmer, Y.-S. Liu, J. Edmond, C. H. Carter, Jr., J. Palmour, S. Dasgupta, G. Gati and J. M. Pimbley, "Silicon Carbide UV Photodiodes'', presented at the High Temperature Conference, Albuquerque, 1991.
(24) J. M. Pimbley and J. D. Cole, "Charge Carrier Dynamics in Alpha Particle Tracks,'' SIAM J. Appl. Math. 52(3), 691-8, June 1992.
(26) J. M. Pimbley, "Recombination of Injected Charge Carriers,'' Solid-State Electron. 33(11), 1333-8, 1990.
(27) J. M. Pimbley and S. D. Silverstein, "Analytical Representation of Integrals Relevant to Coherent Imaging,'' Quart. Appl. Math. 18, 263-72, 1989.
(29) C. A. Heath, G. Belfort, B. E. Hammer, S. D. Mirer and J. M. Pimbley, "Magnetic Resonance Imaging and Modeling of Flow in Hollow-Fiber Bioreactors,'' AIChE Journal 36(4), 547-58, April 1990.
(38) E. A. Burke, G. E. Bender, J. M. Pimbley, G. P. Summers, C. J. Dale, M. A. Xapsos and P. W. Marshall, "Gamma Induced Dose Fluctuations in a Charge-Injection Device,'' IEEE Trans. Nuclear Sci. NS-35(6), 1302-6, December 1988; presented at the 1988 Nuclear and Space Radiation Effects Conference, Portland, Oregon, July 1988.
(39) J. M. Pimbley, E. Cumberbatch and P. Hagan, "Analytical Treatment of MOSFET Source-Drain Resistance,'' IEEE Trans. Elec. Dev. ED-34(4), 834, April 1987.
(42) J. M. Pimbley, "Resistor Trim Modeling,'' Intl. J. Hybrid Microelectronics 9(1), 9, December 1986.
(44) J. M. Pimbley, "Dual Level Transmission Line Model for Current Flow in Metal-Semiconductor Contacts,'' IEEE Trans. Elec. Dev. ED-33(11), 1795, November 1986.
(45) R. J. Connery, G. J. Michon, F. A. Ciani, R. S. Cohen and G. E. Bender, "Design, Application and Performance of Radiation-Hardened CID Solid State Imaging Arrays'', presented at the Space Electronics Conference, Albuquerque, September 1986.
(46) J. M. Pimbley, "Two-Dimensional Current Flow in the MOSFET Source-Drain,'' IEEE Trans. Elec. Dev. ED-33(7), 986, July 1986.
(47) J. M. Pimbley, T.-M. Lu and G.-C. Wang, "Island Coalescence Growth in a Chemisorbed Overlayer,'' J. Vac. Sci. Technol. A. 4(3), 1357, May/June 1986; presented at the 1985 American Vacuum Society Conference, Houston, November 1985.
(48) J. M. Pimbley and T.-M. Lu, "Weakly Coupled Two-Dimensional Correlations in Finite-Level Epitaxy and Chemisorption,'' J. Appl. Phys. 59(7), 2439, April 1986.
(49) C.-Y. Wei, J. M. Pimbley and Y. Nissan-Cohen, "Buried and Graded/Buried LDD Structures for Improved Hot Electron Reliability,'' IEEE Elec. Dev. Lett. EDL-7(6), 380, June 1986.
(50) J. M. Pimbley and D. M. Brown, "Current Crowding in High Density VLSI Metallization Structures,'' IEEE Trans. Elec. Dev. ED-33(9), 1399, September 1986.
(51) J. M. Pimbley, "Semiconductor Electron Current Flow in a High, Spatially Varying Electric Field,'' an invited talk at the Second Annual Workshop on Mathematical Problems in Industry, May 1986.
(52) J. M. Pimbley, "Volume Exclusion Correction to the Ideal Gas with a Lattice Gas Model,'' Am. J. Phys. 54(1), 54, January 1986.
(53) J. M. Pimbley and T.-M. Lu, "Integral Representation of the Diffracted Intensity from One-Dimensional Stepped Surfaces and Epitaxial Layers,'' J. Appl. Phys. 58(6), 2184, Sept. 1985.
(55) J. M. Pimbley, "Short-Range Order in Surfaces and Overlayers,'' Ph.D. thesis submitted to the faculty of the Rensselaer Polytechnic Institute, May 1985.
(56) J. M. Pimbley, "Current Flow in the Metal-Oxide-Semiconductor Field-Effect Transistor,'' an invited talk at the First Annual Workshop on Mathematical Problems in Industry, May 1985.
(57) J. M. Pimbley and T.-M. Lu, "Two-Dimensional Atomic Correlations of Epitaxial Layers,'' J. Appl. Phys. 57(10), 4583, May 1985.
(58) J. M. Pimbley and T.-M. Lu, "Diffraction from Surfaces with Interacting Steps,'' Surface Sci. 159, 169, 1985.
(59) J. M. Pimbley and T.-M. Lu, "Exact One-Dimensional Pair Correlation Functions of a Monolayer/Substrate System,'' J. Appl. Phys. 57(4), 1121, February 1985.
(60) J. M. Pimbley and T.-M. Lu, "Short Range Correlations in Imperfect Surfaces and Overlayers,'' in The Structure of Surfaces, ed. M. A. Van Hove and S. Y. Tong, (Springer, Berlin, 1985); also presented at the First International Conference on the Structure of Surfaces, UC Berkeley, August 1984.
(61) G.-C. Wang, J. M. Pimbley and T.-M. Lu, "More Than One Monolayer Adsorption of Oxygen on the W(112) Surface,'' Phys. Rev. B 31(4), 1950, February 1985.
(62) J. F. Wendelken, G.-C. Wang, J. M. Pimbley and T.-M. Lu, "Characterization of Surface Defect Structure by Low Energy Electron Diffraction,'' presentation at the 1984 Materials Research Society Conference, Boston; Mat. Res. Soc. Symp. Proc. 41, 171, 1985.
(63) J. M. Pimbley, T.-M. Lu and G.-C. Wang, "Distribution of Domain Sizes During Overlayer Growth,'' Surface Sci. 159, 1467, 1985.
(64) J. M. Pimbley and T.-M. Lu, "Short-Range Order in Surfaces and Overlayers,'' presented at the 1985 Physical Electronics Conference, Milwaukee, June 1985.
(66) G. Gildenblat, J. M. Pimbley and M. F. Cote, "Interface State Density Measurements with a Modified C-V Technique,'' Appl. Phys. Lett. 45(5), 558, September 1984.
(68) J. M. Pimbley and G. Gildenblat, "Micron Channel Hot Electron Instabilities,'' SRC Top. Res. Conf., San Diego, June 1984.
(69) J. M. Pimbley and T.-M Lu, "Structural Effects in the Initial Stages of Epitaxy,'' Mat. Res. Soc. Symp. Proc. 25, 375 (1984); presented at the MRS Conf., Boston, November 1983.
(70) J. M. Pimbley and T.-M. Lu, "Atomic Correlations During the First Stages of Epitaxy,'' J. Vac. Sci. Technol. A2(2), 935 (1984); also presented at the Amer. Vac. Soc. Mts., November 1983.
(71) J. M. Pimbley and T.-M. Lu, "A Two-Dimensional Random Growth Model in Layer-by-Layer Epitaxy,'' Surface Sci. 139, 360 (1984).
(72) T.-M. Lu, J. M. Pimbley and G.-C. Wang, "Antiphase Domain Size Distribution in an Overlayer,'' invited talk AIME Conference, February 1984.
(73) J. M. Pimbley and T.-M. Lu, "Atomic Correlations of Stepped Surfaces and Interfaces,'' J. Appl. Phys. 55(1), 182, January 1984.
(74) J. M. Pimbley and T.-M. Lu and G.-C. Wang, "Antiphase Domain Wall Distribution During Overlayer Growth,'' Physical Electronics Conf., June 1984.
(75) J. M. Pimbley and W. Katz, "Infrared Optical Constants of PtSi,'' Appl. Phys. Lett. 42(11), 984-6, June 1983.
(76) M. Chang, R. Connery, B. Siegel, J. Carbone, G. Michon, H. Burke, J. M. Pimbley, P. McConnelee, and D. M. Brown, "High Resolution TV Imager Sensors,'' 1983 Intl. Symp. VLSI Tech. Sys. and Appl., Taiwan, March 30-April 1, 1983.
(77) J. M. Pimbley and P. A. McConnelee, G. J. Michon, H. K. Burke, D. M. Brown, M. F. Chang, B. H. Siegel and J. Carbone, "Performance Improvements in Charge Injection Device Imagers,'' IEEE Cust. Int. Circ. Conf., May 1982.
Internal/Unpublished Reports
(79) D. M. Brown, P. A. McConnelee and J. M. Pimbley, "P-Channel CID Imager Process Report,'' CRD Report No. 81CRD106, May 1981.
(80) J. M. Pimbley, H. R. Philipp and G. J. Michon, "Quantum Yield Modeling and Improvement of the CID Imager,'' GE Memo Report No. MOR-81-040, May 1981.
(81) J. M. Pimbley, "Quantum Yield Modeling and Improvement of the Charge-Injection-Device Imager,'' RPI Master's Thesis, August 1981.
(82) J. M. Pimbley, P. A. McConnelee, D. M. Brown, G. E. Bender, and L. J. Hauge, "Radiation-Hard CID Imager Processing," GOSAM Joint Panel Meeting, November 1981.
(83) J. M. Pimbley and M. Ghezzo, "Self-Aligned Ion Implant Masking for CMOS VLSI Technology,'' CRD Report No. 82CRD015, January 1982.
(84) J. M. Pimbley, P. A. McConnelee, G. J. Michon, H. K. Burke, D. M. Brown, M. F. Chang, B. H. Siegel, and J. Carbone, "Performance Improvements in Charge Injection Device Imagers,'' 1982 GOSAM May Symposium, May 1982.
(85) J. M. Pimbley and P. A. McConnelee, "Effect of Phosphorous Doping and Subsequent Processing on thin Polycrystalline Silicon Films,'' 1982 GOSAM May Symposium, May 1982.
(86) R. D. Baertsch, G. E. Bender, H. K. Burke, L. J. Hauge, P. A. McConnelee, G. J. Michon and J. M. Pimbley, "Radiation-Hard CID Imagers,'' 1982 GOSAM Panel Meeting on Environmental Effects, Valley Forge, November 1982.
(87) J. M. Pimbley, P. A. McConnelee, and D. M. Brown, "Recent Changes in the P-Channel Safeguard CID Imager Process,'' CRD Report No. 82CRD109, May 1982.
(88) J. M. Pimbley, P. A. McConnelee, and D. M. Brown, "Effects of Phosphorous-Doping and Subsequent Processing on Film Thickness and Thermal Oxide Uniformity of Polycrystalline Silicon,'' CRD Report No. 82CRD236, September 1982 and CRD Report No. 86CRD064, May 1986.
(89) J. M. Pimbley, P. A. McConnelee, and D. M. Brown, "Fabrication Processes for Radiation-Hard Charge-Injection Device Imagers,'' CRD Report No. 83CRD151, June 1983.
(90) E. A. Taft and J. M. Pimbley, "Phosphorus-Doped Silicon,'' CRD Report No. 83CRD183, August 1983.
(91) J. M. Pimbley and G. J. Michon, "Theory of Radiation-Induced Noise in Metal-Oxide-Semiconductor Image Sensors,'' CRD Report 84CRD159, July 1984.
(92) G. Gildenblat and J. M. Pimbley, "Maximum Electric Field Strength in the MOSFET Channel,'' unpublished.
(93) J. M. Pimbley, G. E. Bender and R. J. Connery, "Effect of Ion Implantation on Gate Oxide Radiation-Hardness,'' CRD Report 86CRD106, July 1986.
(94) J. M. Pimbley, "On the Solution of the Next-Nearest-Neighbor Ising Model in One Dimension,'' unpublished.
(95) J. M. Pimbley, C.-Y. Wei and H. H. Woodbury, "A Buried Spacer MOSFET Structure for Improved Hot Electron Reliability,'' CRD Report 86CRD030, March 1986.
(96) T. Tung and J. M. Pimbley, "Optimization of Lightly-Doped-Drain Properties for Metal-Oxide-Semiconductor Field-Effect Transistors Through Hot Electron Effect Modeling,'' CRD Report 85CRD131, July 1985.
(97) J. M. Pimbley and G. J. Michon, "Charge Detection Modeling in Solid State Image Sensors,'' CRD Report No. 86CRD078, June 1986; presented at the 1986 GOSAM Symposium, June 1986; and report 86CRD008 to the General Electric Ordinance Systems Division.
(98) J. M. Pimbley, "Finite Difference Study of Semiconductor Electron Transport Under the Influence of a Spatially and Temporally Varying Electric Field,'' unpublished.